IEEE

Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiN x as gate dielectric have been investigated. It is ...
IEEE

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

Abstract: In this article, we experimentally investigate the degradation mechanisms of GaN high-electron mobility transistors (HEMTs) with p-type gate during long-term hightemperature reverse bias ...