The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Abstract: 1.2 kV 4H-SiC MOSFETs with linear, hexagonal, square, and ladder topological layouts were designed with uniform design rules and fabricated simultaneously on the same wafer. These devices ...

V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.

Small apartments and homes offer plenty of charm, but they tend to be lacking when it comes to kitchen space. Luckily, there are tons of small kitchen ideas that maximize storage and efficiency. By ...

As someone who worked in marketing and advertising for years, I know how essential a logo is for any online business - and the best logo makers streamline the entire design process. Even if you have ...