Power MOSFET technology has been developed towards higher cell density for lower on-resistance. There are, however, silicon limits for significant reduction in the on- resistance with the conventional ...
Fairchild Semiconductor’s BGA packaged power MOSFETs are not currently available from a second source. However, the company has addressed the second-source issue by developing a dual layout, which ...
With the significant reduction in package parasitics provided by the eGaN FET, the package inductance is minimized and is no longer the major parasitic loss contributor. The high frequency loop ...
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